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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX80 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS Switching regulators Motor control High frequency and efficiency converters PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 800 400 10 10 15 5 UNIT V V V A A A W ae ae Open collector Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 100 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.1 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IC=5 A;IB=1 A IC=8 A;IB=2.5 A IC=5 A;IB=1 A IC=8 A;IB=2.5 A VCE=800V;VBE=0 TC=125ae VEB=10V; IC=0 IC=1.2A ; VCE=5V 30 MIN 400 TYP. BUX80 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEBO hFE MAX UNIT V 1.5 3.0 1.4 1.8 1.0 3.0 10 V V V V mA mA Switching times ton ts tf Fall time CHA IN Storage time Turn-on time E SEM NG OND IC TOR UC 0.5 3.5 0.5 |I |I |I s s s IC=5A ;IB1=1A; IB2=-2A VCC=-250V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX80 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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